Zero- and one-dimensional thioindates synthesized under solvothermal conditions yielding α-In2S3, β-In2S3 or MgIn2S4 as thermal decomposition products
Identifieur interne : 003565 ( Main/Repository ); précédent : 003564; suivant : 003566Zero- and one-dimensional thioindates synthesized under solvothermal conditions yielding α-In2S3, β-In2S3 or MgIn2S4 as thermal decomposition products
Auteurs : RBID : Pascal:11-0059714Descripteurs français
- Pascal (Inist)
- Synthèse solvothermale, Décomposition thermique, Métal complexe, Propriété symétrie, Semiconducteur bande interdite large, Réseau cubique, Diagramme poudre, Microscopie électronique transmission, Croissance cristalline en solution, Structure cristalline, Précurseur, Nanostructure, Nanocristal, Sulfure d'indium, In2S3, Ethylènediamine, MgIn2S4, 8120K, 6166F.
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Abstract
The first cationic thioindate with composition [In(en)2S]2.2Cl (zero-dimensional) (1) and the first thioindate being charge compensated by a main group metal complex with composition [Mg(en)3]-[In2S4] (one-dimensional) (2) have been prepared with ethylenediamine under solvothermal conditions. The main structural motif of [In(en)2S]2.2Cl is the centro-symmetric rhomboidal [In(en)2S]2+2 ring which is formed by S-S edge-sharing of two symmetry related [InN4S2] octahedra. The structure of [Mg(en)3][In2S4] is composed of a straight one-dimensional {[InS2]-}∞ chain surrounded by [Mg(en)3]2+ complexes. Both compounds are wide band-gap semiconductors. The thermal decomposition reaction of [In(en)2S]2.2Cl stopped at 500°C yielded cubic α-In2S3 and reflections of β-In2S3 are seen in the X-ray powder pattern of the residue obtained at 900 °C. In the case of [Mg(en)3][In2S4] the thiospinel MgIn2S4 was identified as decomposition product. The size of the MgIn2S4 crystals are in the nanometer range as evidenced by a pronounced broadening of the reflections in the powder pattern and with transmission electron microscopy.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Zero- and one-dimensional thioindates synthesized under solvothermal conditions yielding α-In<sub>2</sub>S<sub>3</sub>, β-In<sub>2</sub>S<sub>3</sub> or MgIn<sub>2</sub>S<sub>4</sub> as thermal decomposition products</title><author><name sortKey="Quiroga Gonzalez, E" uniqKey="Quiroga Gonzalez E">E. Quiroga-Gonzalez</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institute for Inorganic Chemistry of the University of Kiel, Max-Eyth-Str. 2</s1><s2>24118 Kiel</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="2">Schleswig-Holstein</region><settlement type="city">Kiel</settlement></placeName></affiliation></author><author><name sortKey="Kienle, L" uniqKey="Kienle L">L. Kienle</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institute of Material Science of the University of Kiel, Synthesis and Real Structure, Kaiserstr. 2</s1><s2>24143 Kiel</s2><s3>DEU</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="2">Schleswig-Holstein</region><settlement type="city">Kiel</settlement></placeName></affiliation></author><author><name sortKey="N Ther, C" uniqKey="N Ther C">C. N Ther</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institute for Inorganic Chemistry of the University of Kiel, Max-Eyth-Str. 2</s1><s2>24118 Kiel</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="2">Schleswig-Holstein</region><settlement type="city">Kiel</settlement></placeName></affiliation></author><author><name sortKey="Chakravadhanula, V S K" uniqKey="Chakravadhanula V">V. S. K. Chakravadhanula</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Institute of Material Science of the University of Kiel, Synthesis and Real Structure, Kaiserstr. 2</s1><s2>24143 Kiel</s2><s3>DEU</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="2">Schleswig-Holstein</region><settlement type="city">Kiel</settlement></placeName></affiliation></author><author><name sortKey="L Hmann, H" uniqKey="L Hmann H">H. L Hmann</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institute for Inorganic Chemistry of the University of Kiel, Max-Eyth-Str. 2</s1><s2>24118 Kiel</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="2">Schleswig-Holstein</region><settlement type="city">Kiel</settlement></placeName></affiliation></author><author><name sortKey="Bensch, W" uniqKey="Bensch W">W. Bensch</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institute for Inorganic Chemistry of the University of Kiel, Max-Eyth-Str. 2</s1><s2>24118 Kiel</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="2">Schleswig-Holstein</region><settlement type="city">Kiel</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0059714</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 11-0059714 INIST</idno><idno type="RBID">Pascal:11-0059714</idno><idno type="wicri:Area/Main/Corpus">003749</idno><idno type="wicri:Area/Main/Repository">003565</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-4596</idno><title level="j" type="abbreviated">J. solid state chem. : (Print)</title><title level="j" type="main">Journal of solid state chemistry : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystal growth from solutions</term><term>Crystal structure</term><term>Cubic lattices</term><term>Indium sulfide</term><term>Metal complex</term><term>Nanocrystal</term><term>Nanostructures</term><term>Powder pattern</term><term>Precursor</term><term>Solvothermal synthesis</term><term>Symmetry property</term><term>Thermal decomposition</term><term>Transmission electron microscopy</term><term>Wide band gap semiconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Synthèse solvothermale</term><term>Décomposition thermique</term><term>Métal complexe</term><term>Propriété symétrie</term><term>Semiconducteur bande interdite large</term><term>Réseau cubique</term><term>Diagramme poudre</term><term>Microscopie électronique transmission</term><term>Croissance cristalline en solution</term><term>Structure cristalline</term><term>Précurseur</term><term>Nanostructure</term><term>Nanocristal</term><term>Sulfure d'indium</term><term>In2S3</term><term>Ethylènediamine</term><term>MgIn2S4</term><term>8120K</term><term>6166F</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The first cationic thioindate with composition [In(en)<sub>2</sub>S]<sub>2</sub>.2Cl (zero-dimensional) (1) and the first thioindate being charge compensated by a main group metal complex with composition [Mg(en)<sub>3</sub>]-[In<sub>2</sub>S<sub>4</sub>] (one-dimensional) (2) have been prepared with ethylenediamine under solvothermal conditions. The main structural motif of [In(en)<sub>2</sub>S]<sub>2</sub>.2Cl is the centro-symmetric rhomboidal [In(en)<sub>2</sub>S]<sup>2+</sup><sub>2</sub> ring which is formed by S-S edge-sharing of two symmetry related [InN<sub>4</sub>S<sub>2</sub>] octahedra. The structure of [Mg(en)<sub>3</sub>][In<sub>2</sub>S<sub>4</sub>] is composed of a straight one-dimensional {[InS<sub>2</sub>]<sup>-</sup>}∞ chain surrounded by [Mg(en)<sub>3</sub>]<sup>2+</sup> complexes. Both compounds are wide band-gap semiconductors. The thermal decomposition reaction of [In(en)<sub>2</sub>S]<sub>2</sub>.2Cl stopped at 500°C yielded cubic α-In<sub>2</sub>S<sub>3</sub> and reflections of β-In<sub>2</sub>S<sub>3</sub> are seen in the X-ray powder pattern of the residue obtained at 900 °C. In the case of [Mg(en)<sub>3</sub>][In<sub>2</sub>S<sub>4</sub>] the thiospinel MgIn<sub>2</sub>S<sub>4</sub> was identified as decomposition product. The size of the MgIn<sub>2</sub>S<sub>4</sub> crystals are in the nanometer range as evidenced by a pronounced broadening of the reflections in the powder pattern and with transmission electron microscopy.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-4596</s0></fA01><fA02 i1="01"><s0>JSSCBI</s0></fA02><fA03 i2="1"><s0>J. solid state chem. : (Print)</s0></fA03><fA05><s2>183</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Zero- and one-dimensional thioindates synthesized under solvothermal conditions yielding α-In<sub>2</sub>S<sub>3</sub>, β-In<sub>2</sub>S<sub>3</sub> or MgIn<sub>2</sub>S<sub>4</sub> as thermal decomposition products</s1></fA08><fA11 i1="01" i2="1"><s1>QUIROGA-GONZALEZ (E.)</s1></fA11><fA11 i1="02" i2="1"><s1>KIENLE (L.)</s1></fA11><fA11 i1="03" i2="1"><s1>NÄTHER (C.)</s1></fA11><fA11 i1="04" i2="1"><s1>CHAKRAVADHANULA (V. S. K.)</s1></fA11><fA11 i1="05" i2="1"><s1>LÜHMANN (H.)</s1></fA11><fA11 i1="06" i2="1"><s1>BENSCH (W.)</s1></fA11><fA14 i1="01"><s1>Institute for Inorganic Chemistry of the University of Kiel, Max-Eyth-Str. 2</s1><s2>24118 Kiel</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of Material Science of the University of Kiel, Synthesis and Real Structure, Kaiserstr. 2</s1><s2>24143 Kiel</s2><s3>DEU</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>2805-2812</s1></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>14677</s2><s5>354000193547460090</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>44 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0059714</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of solid state chemistry : (Print)</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The first cationic thioindate with composition [In(en)<sub>2</sub>S]<sub>2</sub>.2Cl (zero-dimensional) (1) and the first thioindate being charge compensated by a main group metal complex with composition [Mg(en)<sub>3</sub>]-[In<sub>2</sub>S<sub>4</sub>] (one-dimensional) (2) have been prepared with ethylenediamine under solvothermal conditions. The main structural motif of [In(en)<sub>2</sub>S]<sub>2</sub>.2Cl is the centro-symmetric rhomboidal [In(en)<sub>2</sub>S]<sup>2+</sup><sub>2</sub> ring which is formed by S-S edge-sharing of two symmetry related [InN<sub>4</sub>S<sub>2</sub>] octahedra. The structure of [Mg(en)<sub>3</sub>][In<sub>2</sub>S<sub>4</sub>] is composed of a straight one-dimensional {[InS<sub>2</sub>]<sup>-</sup>}∞ chain surrounded by [Mg(en)<sub>3</sub>]<sup>2+</sup> complexes. Both compounds are wide band-gap semiconductors. The thermal decomposition reaction of [In(en)<sub>2</sub>S]<sub>2</sub>.2Cl stopped at 500°C yielded cubic α-In<sub>2</sub>S<sub>3</sub> and reflections of β-In<sub>2</sub>S<sub>3</sub> are seen in the X-ray powder pattern of the residue obtained at 900 °C. In the case of [Mg(en)<sub>3</sub>][In<sub>2</sub>S<sub>4</sub>] the thiospinel MgIn<sub>2</sub>S<sub>4</sub> was identified as decomposition product. The size of the MgIn<sub>2</sub>S<sub>4</sub> crystals are in the nanometer range as evidenced by a pronounced broadening of the reflections in the powder pattern and with transmission electron microscopy.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A20</s0></fC02><fC02 i1="02" i2="3"><s0>001B60A66F</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Synthèse solvothermale</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Solvothermal synthesis</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Síntesis solvotermal</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Décomposition thermique</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Thermal decomposition</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Descomposición térmica</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Métal complexe</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Metal complex</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Metal complejo</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Propriété symétrie</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Symmetry property</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Propiedad simetría</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Réseau cubique</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Cubic lattices</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Diagramme poudre</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Powder pattern</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Diagrama polvo</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Transmission electron microscopy</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Croissance cristalline en solution</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Crystal growth from solutions</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Structure cristalline</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Crystal structure</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Précurseur</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Precursor</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Nanostructure</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Nanostructures</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Nanocristal</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Nanocrystal</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Nanocristal</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Sulfure d'indium</s0><s5>15</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Indium sulfide</s0><s5>15</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Indio sulfuro</s0><s5>15</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>In2S3</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Ethylènediamine</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>MgIn2S4</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>8120K</s0><s4>INC</s4><s5>65</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>6166F</s0><s4>INC</s4><s5>66</s5></fC03><fN21><s1>038</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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